utc 2sD1616/a npn epitaxial silicon transistor utc unisonic technologies co., ltd. 1 qw-r201-008,a npn epitaxial silicon transistor description *audio frequency power amplifier *medium speed switching to-92 1 1: emitter 2: collector 3: base absolute maximum ratings parameter symbol value unit storage temperature tstg -55 ~+150 c junction temperature tj 150 c total power dissipation (ta=25 c) pc 750 mw collector to base voltage: D1616 D1616a vcbo 60 120 v collector to emitter voltage: D1616 D1616a vceo 50 60 v emitter to base voltage vebo 6 v collector current (dc) ic 1 a collector current (*pulse) ic 2 a note: (*) pulse width 10ms, duty cycle<50% characteristics (ta=25 c) characteristic symbol test conditions min. typ. max. unit collector cut-off current icbo vcb=60v 100 na emitter cut-off current iebo veb= 6v 100 na collector-emitter saturation voltage vce(sat) ic=1a, ib=50ma 0.15 0.3 v base-emitter saturation voltage vbe(sat) ic=1a, ib=50ma 0.9 1.2 v base emitter on voltage vbe(on) vce=2v, ic=50ma 600 640 700 mv dc current gain: D1616 D1616a hfe1 vce=2v, ic=100ma 135 135 600 400 hfe2 vce=2v, ic=1a 81 current gain bandwidth product ft vce=2v, ic=100ma 100 160 mhz output capacitance cob vcb=10v, f=1mhz 19 pf turn on time ton vce=10v, ic=100ma 0.07 us
utc 2sD1616/a npn epitaxial silicon transistor utc unisonic technologies co., ltd. 2 qw-r201-008,a characteristic symbol test conditions min. typ. max. unit storage time ts ib1=-ib2=10ma 0.95 us fall time tf vbe(off)=-2 -3v 0.07 us classification of h fe1 rank y g l hfe1 135-270 200-400 300-600
utc 2sD1616/a npn epitaxial silicon transistor utc unisonic technologies co., ltd. 3 qw-r201-008,a
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